IXGR32N60CD1 Datasheet - IXYS Corporation

IXGR32N60CD1 HiPerFAST IGBT

www.DataSheet4U.com HiPerFASTTM IGBT with Diode ISOPLUS247TM (Electrically Isolated Backside) IXGR 32N60CD1 VCES IC25 VCE(SAT) tfi(typ) = 600 V = 45 A = 2.7 V = 55 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight 50/60 Hz, RMS t = 1 min leads-to housing Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C.

IXGR32N60CD1 Features

* z z z z z ISOPLUS 247TM (IXGR) E 153432 G C E Isolated backside

* G = Gate, E = Emitter, C = Collector, TAB = Collector

* Patent pending DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - driv

IXGR32N60CD1_IXYSCorporation.pdf