IXGR32N60CD1 Datasheet - IXYS Corporation

IXGR32N60CD1, HiPerFAST IGBT

www.DataSheet4U.com HiPerFASTTM IGBT with Diode ISOPLUS247TM (Electrically Isolated Backside) IXGR 32N60CD1 VCES IC25 VCE(SAT) tfi(typ) = 600 V =.

IXGR32N60CD1_IXYSCorporation.pdf

IXGR32N60CD1 Datasheet Preview — Preview of IXGR32N60CD1 PDF

Datasheet Details

Part number:

IXGR32N60CD1

Manufacturer:

IXYS Corporation

File Size:

598.12 KB

Description:

HiPerFAST IGBT

Features

* z z z z z ISOPLUS 247TM (IXGR) E 153432 G C E Isolated backside
* G = Gate, E = Emitter, C = Collector, TAB = Collector
* Patent pending DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - driv

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 125°C 5.0 200 3 ± 100 2.3 2.7 V µA mA nA V z z z VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE z z VCE = 600V VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IT, VGE = 15 V Note 1

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IXGR32N60CD1 HiPerFAST IGBT IXYS Corporation

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