IXGR32N90B2D1 Datasheet - IXYS

IXGR32N90B2D1 IGBT

Advance Technical Information HiPerFASTTM IGBT IXGR 32N90B2D1 with Fast Diode Electrically Isolated Base V I CES VC25 t CE(sat) fi typ = 900 V = 47 A = 2.9 V = 150 ns Symbol Test Conditions VCES VCGR TJ = 25OC to 150OC TJ = 25OC to 150OC; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC110 ICM TC = 25OC TC = 110OC TC = 25OC, 1 ms SSOA (RBSOA) PC VGE= 15 V, TVJ = 125OC, RG = 10 Ω Clamped inductive load: VCL < 600V TC = 25OC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm.

IXGR32N90B2D1 Features

* ISOLATED TAB C = Collector y Electrically isolated mounting tab y High frequency IGBT y High current handling capability y MOS Gate turn-on - drive simplicity Applications y PFC circuits y Uninterruptible power supplies (UPS) y Switched-mode and resonant-mode power supplies y AC motor speed contro

IXGR32N90B2D1-IXYS.pdf