IXGR16N170AH1 Datasheet - IXYS

IXGR16N170AH1 High Voltage IGBT

High Voltage IGBT w/ Sonic Diode (Electrically Isolated Tab) IXGR16N170AH1 VCES IC90 VCE(sat) tfi(typ) = 1700V = 8A £ 5.0V = 35ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient Maximum Ratings 1700 V 1700 V 20 V 30 V TC = 25C TC = 90C TC = 90C TC = 25C, 1ms 16 A 8 A 15 A 40 A VGE = 15V, TVJ = 125C, RG = 10 Clamped I.

IXGR16N170AH1 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 2500V~ Electrical Isolation

* Anti-Parallel Sonic Diode

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Capacitor Discharge

IXGR16N170AH1_IXYS.pdf