* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Anti-Parallel Sonic Diode
* International Standard Package Advantages
* High Power Density
* Low Gate Drive Requirement Applications
* Capacitor Discharge
IXGR16N170AH1 Datasheet (294.58 KB)
IXGR16N170AH1
IXYS
294.58 KB
High voltage igbt.
High Voltage IGBT w/ Sonic Diode
(Electrically Isolated Tab)
IXGR16N170AH1
VCES IC90 VCE(sat) tfi(typ)
= 1700V = 8A £ 5.0V = 35ns
Symbol
VCES VCG.
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