1.0pF Datasheet | Specifications & PDF Download

Lithium Ion NCR18650PF Features & Benefits • High energy and power density • Long, stable, high power • High safety performance • Ideal for power ass

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IPS60R210PFD7S MOSFET 600V CoolMOSª PFD7 SJ Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to

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IPD60R210PFD7S MOSFET 600V CoolMOSª PFD7 SJ Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to

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IPLK60R360PFD7 MOSFET 600V CoolMOSª PFD7 SJ Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to

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IPLK60R600PFD7 MOSFET 600V CoolMOSª PFD7 SJ Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to

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IPLK60R1K0PFD7 MOSFET 600V CoolMOSª PFD7 SJ Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to

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JML06 JML06 (PF)：3~120 :100V :220V :10000MΩ :-25~85℃ NominalCapacitance(PF) CapRange(PF) Captolera TampCoeff QVA Min Max nce (ppm/℃) LUE 3 1

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, OSG60R180FF, OSG60R180PF, OSG60R180KF, OSG60R180HF, OSG60R180IF Enhancement Mode N-Channel Power MOSFET  General Description OSG60R180xF use ad

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Trench IGBT phaseleg ISOPLUS™ Surface Mount Power Device including a NTC ITF40PF1200DHGTLB VCES = 1200 V IC25 = 60 A VCE(sat) = 2.05 V Part number I

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, OSG55R140FF, OSG55R140PF, OSG55R140RF, OSG55R140HF Enhancement Mode N-Channel Power MOSFET  General Description OSG55R140xF use advanced GreenM

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80PF(R) (W) Series Vishay High Power Products Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A 80PF(R) 80PF(R) W DO-203AB (

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® TOP209/210 TOPSwitch Family Three-terminal Off-line PWM Switch Product Highlights Cost Effective Switcher for Low Power Applications • Replaces lin

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Silicon N-Channel Power MOSFET ○R HPA600R160PF-G General Description： HPA600R160PF-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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Silicon N-Channel Power MOSFET ○R HPF600R160PF-G General Description： HPF600R160PF-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STD10PF06 60 V < 0.20 Ω 10 A s TYPICAL RDS(on)

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Datasheet MM32L0xx 32­Bit Micro controller based on ARM® Cortex® M0 Version: 2.20_n MindMotion reserves the right to change the relevant information w

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STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STD10PF06 60 V < 0.20 Ω 10 A s TYPICAL RDS(on)

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QL4016 QuickRAM Data Sheet • • • • • • 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM Device Highlights High Per

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80PF(R) (W) Series Vishay High Power Products Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A 80PF(R) 80PF(R) W DO-203AB (

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isc P-Channel MOSFET Transistor STP80PF55 FEATURES ·Drain Current : ID= -80A@ TC=25℃ ·Drain Source Voltage : VDSS= -55V(Min) ·Static Drain-Source On

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