1.0pF Datasheet | Specifications & PDF Download

Lithium Ion NCR18650PF Features & Benefits • High energy and power density • Long, stable, high power • High safety performance • Ideal for power ass

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, OSG60R180FF, OSG60R180PF, OSG60R180KF, OSG60R180HF, OSG60R180IF Enhancement Mode N-Channel Power MOSFET  General Description OSG60R180xF use ad

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, OSG65R900AF, OSG65R900DF, OSG65R900FF, OSG65R900PF Enhancement Mode N-Channel Power MOSFET  General Description OSG65R900xF use advanced GreenMOS

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Switch-mode Power Rectifier MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G, NRVUD550PFT4G-VF01 These state−of−the−art devices are desig

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www.DataSheet4U.com 1/4 DATA SHEET 2007.01 Z TAIWAN TAIYO INK CO.,LTD No.7, Ta Tung 2nd Rd., Kuan-Yin Industry Park Taoyuan, Taiwan, R.O.C. TEL:886-3

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Schottky Barrier Rectifier, Trench-based NRTS1260PFS, NRVTS1260PFS This TO−277 trench Schottky rectifier provides fast switching performance in a com

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80PF(R) (W) Series Vishay High Power Products Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A 80PF(R) 80PF(R) W DO-203AB (

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80PF(R) (W) Series Vishay High Power Products Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A 80PF(R) 80PF(R) W DO-203AB (

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MUR550APF, MURD550PF, MUR550PF Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices are designed for power factor correction i

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® TOP209/210 TOPSwitch Family Three-terminal Off-line PWM Switch Product Highlights Cost Effective Switcher for Low Power Applications • Replaces lin

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********** C-MOS 4M (1,048,576X4)-BIT DYNAMIC RAM - TOP VIEW 9 10 11 12 14 15 16 17 18 5 MB814400A-70PFTN IL22 DQ1 1 DQ2 2 WE 3 RAS 4 A9 5 GND 26 2

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, OSG55R140FF, OSG55R140PF, OSG55R140RF, OSG55R140HF Enhancement Mode N-Channel Power MOSFET  General Description OSG55R140xF use advanced GreenM

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IPN60R360PFD7S MOSFET 600V CoolMOSª PFD7 SJ Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to

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ISL9R860PF2 April 2003 ISL9R860PF2 8A, 600V Stealth™ Diode General Description The ISL9R860PF2 is a Stealth™ diode optimized for low loss performanc

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Schottky Barrier Rectifier, Trench-based NRTS1260PFS, NRVTS1260PFS This TO−277 trench Schottky rectifier provides fast switching performance in a com

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Trench IGBT phaseleg ISOPLUS™ Surface Mount Power Device including a NTC ITF40PF1200DHGTLB VCES = 1200 V IC25 = 60 A VCE(sat) = 2.05 V Part number I

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STB80PF55 STP80PF55 P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type STP80PF55 STB80PF55 VDSS 55V 55V RDS(on)

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PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1

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Switch-mode Power Rectifier MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G, NRVUD550PFT4G-VF01 These state−of−the−art devices are desig

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IGBT Module Phase leg Part number MITH200PF1700LP MITH200PF1700LP tentative VCES IC25 VCE(sat) = 1700 V = 285 A = 1.90 V 76 54 T2 T1 D2 D1

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