1.1M Datasheet | Specifications & PDF Download

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Texas Instruments

LM3100MH - Synchronous 1MHz 1.5A Step-Down Voltage Regulator

Product Folder Order Now Technical Documents Tools & Software Support & Community LM3100 SNVS421H – JANUARY 2006 – REVISED OCTOBER 2017 LM3100 Sy.
Rating: 2 ★★ (100 votes)
BetaTHERM

0.1K1MBD1 - Interchangeable mini-BetaCURVE Probe

BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem.
Rating: 1 (18 votes)
Toshiba

TC58FVB800 - 8 MBIT (1M x 8 BITS / 512K x 16 BITS) CMOS FLASH MEMORY

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Rating: 1 (12 votes)
BetaTHERM

0.3K1MBD1 - Interchangeable mini-BetaCURVE Probe

BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem.
Rating: 1 (12 votes)
Nichicon

UPM1A471MHD - ALUMINUM ELECTROLYTIC CAPACITORS

ALUMINUM ELECTROLYTIC CAPACITORS PM Extremely Low Impedance, High Reliability series High reliability withstanding 5000 hour load life at +105°C (3000.
Rating: 1 (11 votes)
United Chemi-Con

EKMH3B1VSN181MP40T - KMH Series ALUMINUM CAPACITORS

KMH SERIES KMH Series Ⅲ Engineering Bulletin Mar 07 Snap Mount Ⅲ Large Capacitance Ⅲ High CV Ⅲ High Ripple Ⅲ RoHS Compliant Ⅲ‫؀‬ 105؇C Maximum Temp.
Rating: 1 (10 votes)
Fuji Electric

K1507-01MR - 2SK1507-01MR

www.DataSheet4U.com www.DataSheet4U.com .
Rating: 1 (8 votes)
Samsung

K9LCGD8U1M-B - FLASH MEMORY

K9GBGD8X0M K9LCGD8X1M K9PFGD8X7M K9HDGD8X5M K9PFGD8X5M Enterprise Advance FLASH MEMORY K9GBGD8X0M K9LCGD8X1M K9HDGD8X5M K9PFGD8X7M K9PFGD8X5M INFO.
Rating: 1 (7 votes)
Texas Instruments

LM3100 - Synchronous 1MHz 1.5A Step-Down Voltage Regulator

Product Folder Order Now Technical Documents Tools & Software Support & Community LM3100 SNVS421H – JANUARY 2006 – REVISED OCTOBER 2017 LM3100 Sy.
Rating: 1 (7 votes)
ISSI

IS45VM32400G - 1M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou.
Rating: 1 (6 votes)
Fuji Electric

K3645 - 2SK3645-01MR

2SK3645-01MR FUJI POWER MOSFET 200304 Super FAP-G Series www.DataSheet4U.com N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Features .
Rating: 1 (6 votes)
GSI Technology

GS71116AGP - 1Mb Asynchronous SRAM

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Rating: 1 (6 votes)
Fairchild Semiconductor

HCPL2631M - Dual-Channel High-Speed 10 MBit/s Logic Gate Optocouplers

Single-Channel: 6N137M, HCPL2601M, HCPL2611M Dual-Channel: HCPL2630M, HCPL2631M — High Speed 10MBit/s Logic Gate Optocouplers April 2013 Single-Chan.
Rating: 1 (6 votes)
Techcode

TD8208 - High Efficiency 1MHz 2A Step Up Regulator

Techcode® High Efficiency 1MHz, 2A Step Up Regulator DATASHEET TD8208 General Description Features TD8208 is a high efficiency, current-mode contr.
Rating: 1 (6 votes)
RCA

D1201M - Rectifiers

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~ File No.495 ffilCIBLJD Solid State Division Rectifiers D1201 Series i-A, 50-to-i000-Y Sili.
Rating: 1 (5 votes)
ISSI

IS42VM32400G - 1M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou.
Rating: 1 (5 votes)
Fuji Electric

2SK2903-01MR - N-CHANNEL SILICON POWER MOS-FET

2SK2903-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof .
Rating: 1 (5 votes)
NETSOL

S7K1618T2M - 512Kx36 & 1Mx18 DDRII+ CIO BL2 SRAM

SSSS7777KKKK1111666613318668TTTT2222MMMM 551122KKxx3366 && 11MMxx1188 DDDDRRIIII++ CCIIOO BBLL22 SSRRAAMM 18Mb DDRII+ CIO BL2 SRAM Specification (2..
Rating: 1 (5 votes)
WON-TOP

GS1M - 1.0A SURFACE MOUNT STANDARD DIODE

® WON-TOP ELECTRONICS Features  Diffused Junction  Ideally Suited for Automatic Assembly  Low Forward Voltage Drop  Surge Overload Rating to 30A P.
Rating: 1 (5 votes)
Inchange Semiconductor

2SK2002-01M - N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot.
Rating: 1 (5 votes)
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