1.32-inch Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

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Aptina Confidential and Proprietary Preliminary‡ AR0132AT: 1/3-Inch CMOS Digital Image Sensor Features 1/3-Inch CMOS Digital Image Sensor AR0132AT

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205S ·DESCRIPTION ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·

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isc Silicon PNP Power Transistor ESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -45V(Min.)

Rating: 1 ★ (7 votes)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP032N06N3，IIPP032N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.9mΩ ·Enhanc

Rating: 1 ★ (7 votes)

isc N-Channel MOSFET Transistor 2SK3932-01MR FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source

Rating: 1 ★ (7 votes)

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum

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Features z 0.8 inch digit height. z Low current operation. z Excellent character appearance. z Easy mounting on P.C. boards or sockets. z Categorized

Rating: 1 ★ (6 votes)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB4132 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·M

Rating: 1 ★ (6 votes)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor MTW32N20E ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching l

Rating: 1 ★ (6 votes)

isc Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·G

Rating: 1 ★ (6 votes)

isc Silicon NPN Power Transistor 2SC3272 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Sa

Rating: 1 ★ (6 votes)

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% test ·Minimum Lot-to-Lot

Rating: 1 ★ (6 votes)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD632 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·Excellent

Rating: 1 ★ (6 votes)

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1532 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)

Rating: 1 ★ (6 votes)

isc N-Channel Mosfet Transistor ·FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology

Rating: 1 ★ (6 votes)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1632 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Vo

Rating: 1 ★ (5 votes)

Features z 0.8 inch digit height. z Low current operation. z Excellent character appearance. z Easy mounting on P.C. boards or sockets. z Categorized

Rating: 1 ★ (5 votes)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for

Rating: 1 ★ (5 votes)

isc N-Channel Mosfet Transistor ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variatio

Rating: 1 ★ (5 votes)