10-12W Datasheet | Specifications & PDF Download

LINEAR INTEGRATED CIRCUIT 12W Hi-Fi AUDIO AMPLIFIER The TDA 2010 is a monolithic integrated operational amplifier in a 14-lead quad in-line plastic p

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FEATURES • 10 WATTS OUTPUT POWER • OUTPUT CURRENT UP TO 2.5A • STANDARD 2.0 X 1.0 X 0.4 INCH PACKAGE • HIGH EFFICIENCY UP TO 87% • 2:1 AND 4:1 WIDE I

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FP10R12W1T4P EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC / TIM EasyPIM™ module with Trench/Fieldstop I

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FEATURES • 10 WATTS OUTPUT POWER • OUTPUT CURRENT UP TO 2.5A • STANDARD 2.0 X 1.0 X 0.4 INCH PACKAGE • HIGH EFFICIENCY UP TO 87% • 2:1 AND 4:1 WIDE I

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FEATURES • 10 WATTS OUTPUT POWER • OUTPUT CURRENT UP TO 2.5A • STANDARD 2.0 X 1.0 X 0.4 INCH PACKAGE • HIGH EFFICIENCY UP TO 87% • 2:1 AND 4:1 WIDE I

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DC/DC Railway Converter TEN 3WIRH Series, 3 Watt • Fully encapsulated DIP-24 package • 3000 VAC I/O isolation (reinforced) • 4:1 input voltage range

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DC/DC Converter THD 10WIN Series, 10 Watt • UItra wide 4:1 input voltage range • Internal EMI-filter meets EN 55032, Class A without external compon

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IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors 2000 January 7 Philips Semiconductors Phili

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DC/DC Medical Converter THM 10WI Series, 10 Watt • Ultra wide 4:1 input voltage 10 W DC/DC converter in a compact DIP-24 plastic case • I/O isolati

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FP10R12W1T7_B3 EasyPIM™ module Preliminary datasheet EasyPIM™ module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and NTC Features • Electrica

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Chip Ferrite Bead - MCB & MHC W Series Feature • Monolithic inorganic material construction • Closed magnetic circuit avoids crosstalk • SMD Type & s

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Chip Ferrite Bead - MCB & MHC W Series Feature • Monolithic inorganic material construction • Closed magnetic circuit avoids crosstalk • SMD Type & s

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Alfa-MOS Technology General Description AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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Alfa-MOS Technology AFN3112W 100V N-Channel Enhancement Mode MOSFET General Description AFN3112W, N-Channel enhancement mode MOSFET, uses Advanced T

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TDA1510 TDA1510A 24 W BTL OR 2 x 12 W STEREO CAR RADIO POWER AMPLIFIER GENERAL DESCRIPTION The TDA 151 O/TDA 151 OA is a class-B integrated output a

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MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MM

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 1. EMITTER 2SC2230/2230A TRANSISTOR (NPN) FEAT

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FP10R12W1T4P_B11 EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / bereits aufgetragenem Thermal Interface Mater

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Technische Information / Technical Information IGBT-Module IGBT-modules FP10R12W1T4_B11 IGBT,Wechselrichter / IGBT,Inverter Höchstzulässige Werte

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