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V12WM100C-M3 Dual Trench MOS Barrier Schottky Rectifier

V12WM100C-M3 Description

www.vishay.com V12WM100C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 3 A TMBS® TO-252 .

V12WM100C-M3 Features

* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* Material categorization: For definitions of compli

V12WM100C-M3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 6 A (TA = 125 °C) TJ max. Package 2x6A 100 V 90 A 0.57 V 150 °C TO-252 (D-PAK) Diode variation Dual common

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Datasheet Details

Part number
V12WM100C-M3
Manufacturer
Vishay ↗
File Size
117.67 KB
Datasheet
V12WM100C-M3-Vishay.pdf
Description
Dual Trench MOS Barrier Schottky Rectifier

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Dual Trench MOS Barrier Schottky Rectifier Vishay
Vishay V12WM100C-M3-like datasheet