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V12W60C-M3 Dual Trench MOS Barrier Schottky Rectifier

V12W60C-M3 Description

www.vishay.com V12W60C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A TMBS® TO-252 (D.

V12W60C-M3 Features

* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* Material categorization: For definitions of compli

V12W60C-M3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 6 A (TA = 125 °C) TJ max. Package 2x6A 60 V 90 A 0.47 V 150 °C TO-252 (D-PAK) Diode variation Dual common

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Datasheet Details

Part number
V12W60C-M3
Manufacturer
Vishay ↗
File Size
118.92 KB
Datasheet
V12W60C-M3-Vishay.pdf
Description
Dual Trench MOS Barrier Schottky Rectifier

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Dual Trench MOS Barrier Schottky Rectifier Vishay
Vishay V12W60C-M3-like datasheet