V12P10 - Trench MOS Barrier Schottky Rectifier
V12P10 Features
* Very low profile - typical height of 1.1 mm
* Ideal for automatic placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
