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V12PM10 Trench MOS Barrier Schottky Rectifier

V12PM10 Description

www.vishay.com V12PM10 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = .

V12PM10 Features

* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

V12PM10 Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 12 A VRRM 100 V IFSM 200 A VF at IF = 15 A (125 °C) 0.61 V TJ max. Package 175 °C SMPC (TO-277A) Circuit configuration Single MECHANICAL

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Datasheet Details

Part number
V12PM10
Manufacturer
Vishay ↗
File Size
105.41 KB
Datasheet
V12PM10-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
Vishay V12PM10-like datasheet