V12PM10 Datasheet - Vishay

V12PM10, Trench MOS Barrier Schottky Rectifier

www.vishay.com V12PM10 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = .

datasheet Preview Page 1 from Datasheet4u.com

V12PM10-Vishay.pdf

V12PM10 Datasheet Preview — Preview of V12PM10 PDF

Datasheet Details

Part number:

V12PM10

Manufacturer:

Vishay ↗

File Size:

105.41 KB

Description:

Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 12 A VRRM 100 V IFSM 200 A VF at IF = 15 A (125 °C) 0.61 V TJ max. Package 175 °C SMPC (TO-277A) Circuit configuration Single MECHANICAL

V12PM10 Distributors

📁 Related Datasheet

V120CH8 V120MA1A V120MA2B V120MA2S V120MLA1210 V120ZA05P

📌 All Tags

V12PM10 Trench MOS Barrier Schottky Rectifier Vishay

Vishay V12PM10-like datasheet