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V12PM45 Trench MOS Barrier Schottky Rectifier

V12PM45 Description

www.vishay.com V12PM45 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = .

V12PM45 Features

* Very low profile - typical height of 1.1 mm Available
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qualified

V12PM45 Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-

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Datasheet Details

Part number
V12PM45
Manufacturer
Vishay ↗
File Size
102.30 KB
Datasheet
V12PM45-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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