Datasheet Details
- Part number
- V12P12
- Manufacturer
- Vishay ↗
- File Size
- 98.97 KB
- Datasheet
- V12P12-Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier
V12P12 Description
www.vishay.com V12P12 Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at.
V12P12 Features
* Very low profile - typical height of 1.1 mm
Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak
V12P12 Applications
* For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. PRIMARY CHARACTERISTICS
IF(AV)
12 A
VRRM
120 V
IFSM
150 A
EAS 100 mJ
VF at IF = 12 A
0.63 V
TJ max. Package
150 °C SMPC (TO-277A)
Circuit configuration
Single
MECHANIC
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