V12P12 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V12P12 Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at.

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Datasheet Specifications

Part number: V12P12
Manufacturer: Vishay ↗
File Size: 98.97 KB
Datasheet: V12P12-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 12 A VRRM 120 V IFSM 150 A EAS 100 mJ VF at IF = 12 A 0.63 V TJ max. Package 150 °C SMPC (TO-277A) Circuit configuration Single MECHANIC

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Trench MOS Barrier Schottky Rectifier Vishay

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