Datasheet Details
- Part number
- V12P8
- Manufacturer
- Vishay ↗
- File Size
- 99.68 KB
- Datasheet
- V12P8-Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier
V12P8 Description
www.vishay.com V12P8 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0..
V12P8 Features
* Very low profile - typical height of 1.1 mm
Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak
V12P8 Applications
* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS
IF(AV)
12 A
VRRM
80 V
IFSM
200 A
VF at IF = 12 A (TA = 125 °C)
0.54 V
TJ max. Package
150 °C SMPC (TO-277A)
Circuit configuration
Single
MECHAN
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