10-30 Datasheet | Specifications & PDF Download

QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme hig

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PE30100K N-Channel Enhancement Mode Power MOSFET Description The PE30100K uses advanced trench technology to provide excellent RDS(ON) and low gate c

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8308/8306 Preliminary Product Specification Subject to change Realtek 8/6-Port 10/100 Mbps Ethernet Switch Controller with Embedded memory The RTL830

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Click here for production status of specific part numbers. MAX30102 High-Sensitivity Pulse Oximeter and Heart-Rate Sensor for Wearable Health Genera

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RTL8304MB-CG SINGLE-CHIP 4-PORT 10/100M ETHERNET SWITCH CONTROLLER DATASHEET (CONFIDENTIAL: Development Partners Only) Rev. 1.0 26 May 2014 Track ID:

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RTL8306E-CG SINGLE-CHIP 6-PORT 10/100MBPS ETHERNET SWITCH CONTROLLER WITH DUAL MII/RMII INTERFACES DATASHEET (CONFIDENTIAL: Development Partners Only)

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RTL8309N SINGLE-CHIP 8-PORT 10/100MBPS ETHERNET SWITCH CONTROLLER DATASHEET Draft Rev. 1.0 10 January 2012 Track ID: 9-Port 10/100Mbps Ethernet Switc

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www.DataSheet4U.com YOUDA INTEGRATED CIRCUIT TDA1030 TV SOUND POWER AMPLIFIER—TDA1030 DESCRIPTION The TDA1030 is a monolithic integrated circuit de

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UF300 THRU UF3010 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES l Plastic package has Underwriters Laborator

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QN3107M6N N-Channel 30V Fast Switching MOSFET General Description The QN3107M6N is the highest performance trench N-Channel MOSFET with extreme high

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Schottky Barrier Rectifier FEATURES ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability, Low For

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() CRST030N10N,CRSS028N10N SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N10 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag

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Small relay D2 V23042 PCB relay for DC voltage, polarized, monostable or bistable Features q Universally applicable in the most varied circuit func

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Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 High Speed PT IGBTs for 50-150kHz switching V= CES IC110 = V ≤ CE(sat) t = fi

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http://www.ncepower.com Pb Free Product NCE30H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technolog

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