1030 Datasheet | Specifications & PDF Download

TCM1030, TCM1050 DUAL TRANSIENT-VOLTAGE SUPPRESSORS D Meet or Exceed Bell Standard LSSGR Requirements D Externally-Controlled Negative Firing Volt

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Shanghai Chipanalog Microelectronics Co., Ltd. CA-IF103x V1.0, 2023/11/29 CA-IF103x 3.3V Powered CAN Bus Transceiver 1. Features • 3.3V single powe

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Production specification Schottky Barrier Rectifier SBL1030---SBL10100 FEATURES z Metal-Semiconductor Junction with Guardring. z Epitaxial Constr

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SB1020 THRU SB1045 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 45 Volts Forward Current - 10.0 Ampere FEATURES ● The plastic package carries U

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MCC Features • Low Power Loss • High Efficiency • Low Forward Voltage • High surge capacity • High Current Capability
     omponents 212

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SEP ELECTRONIC CORP. SBL1030 thru SBL1060 10 A Schottky Barrier Rectifier Rectifier Reverse Voltage 30 to 60V Features Extremely low VF Epitaxial co

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www.DataSheet4U.com DATA SHEET SB1020F~SB10150F ISOLATION SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 150 Volts CURRENT 10 Amperes FEATURES .112(2.85)

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LD1030 DFB Transmitter OSA 1310, 10Gb/s Front-End Chipset in TO-Flex FEATURES • 1310nm 10 Gb/s uncooled DFB laser with a monitoring photodetector in

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SB1020 THRU SB1080 10.0AMP SCHOTTKY BARRIER RECTIFIERS FEATURES . Low forward voltage drop . High current capability . High reliability . High surge

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2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emit

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Production specification Schottky Barrier Rectifier SBL1030CT-SBL10100CT FEATURES z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial

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PRODUCT SPECIFICATION 1 Z90102/103/104 40-PIN LOW-COST DIGITAL TELEVISION CONTROLLER FEATURES 8-Bit CMOS Microcontroller for Consumer Television, Ca

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MLN1030S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1030S is Designed for PACKAGE STYLE .280 4L STUD A 45° FEATURES: • • • Omnigold™ M

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MLN1030SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1030SL is Designed for PACKAGE STYLE .280 4L PILL A FEATURES: • • • Omnigold™ Met

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MLN1030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1030SS is Designed for PACKAGE STYLE .205 4L STUD D A FEATURES: • • • Omnigold™

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SMD Type Diodes Schottky Diodes SS1020 ~ SS10100 ■ Features ● Fast switching speed ● Low power loss, high efficieucy ● Surface mount package ideall

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www.DataSheet4U.com ® T1020-600W T1030-600W SNUBBERLESS TRIAC FEATURES s s s s s ITRMS = 10 A VDRM = VRRM = 600V EXCELLENT SWITCHING PERFORMAN

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www.DataSheet4U.com PL IA Features ■ Available in E6 values Applications ■ Input/output of DC/DC converters ■ Power supplies for: • Portable commu

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WJA1030 +5V Active-Bias InGaP HBT Gain Block Product Features • Cascadable gain block • 50 – 4000 MHz • 15 dB Gain @ 1.9GHz www.datasheet4u.com • +18

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www.DataSheet4U.com SCHTTKY BARRIER RECTIFIER VOLTAGE RANGE CURRENT 20 to 100 Volts 10.0 Ampere SRB1020 THRU SRB10100 FEATURES • • • • • • Plastic

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