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LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology

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Description

LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications * EXCELLENT THERMA.
The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial.

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Applications

* EXCELLENT THERMAL STABILITY
* POUT = 30 W with 11 dB gain @ 2170 MHz
* BeO FREE PACKAGE
* INTERNAL INPUT MATCHING
* ESD PROTECTION CASE 465E

LET21030C Distributors

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📌 All Tags

LET21030C POWER TRANSISTORS Ldmos Enhanced Technology STMicroelectronics
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