LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology

STMicroelectronics

Description

LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications * IS-97 CDMA PERFORMANCES .
The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial.

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Datasheet Specifications

Part number: LET20030C
Manufacturer: STMicroelectronics ↗
File Size: 37.44 KB
Datasheet: LET20030C_STMicroelectronics.pdf
Description: RF POWER TRANSISTORS Ldmos Enhanced Technology

Applications

* IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 %
* EXCELLENT THERMAL STABILITY
* COMMON SOURCE CONFIGURATION
* POUT = 30 W with 11 dB gain @ 2000 MHz

LET20030C Distributors

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LET20030C POWER TRANSISTORS Ldmos Enhanced Technology STMicroelectronics

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