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LET20030C - RF POWER TRANSISTORS Ldmos Enhanced Technology

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Description

The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz.

The LET20030C is designed for high gain and broadband performance operating in common source mode at 26 V.

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Datasheet Details

Part number LET20030C
Manufacturer STMicroelectronics
File Size 37.44 KB
Description RF POWER TRANSISTORS Ldmos Enhanced Technology
Datasheet download datasheet LET20030C Datasheet
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LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 % • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION ORDER CODE LET20030C M243 epoxy sealed BRANDING LET20030C DESCRIPTION The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 26 V. It is ideal for base station applications requiring high linearity. PIN CONNECTION 1 3 2 1. Drain 2. Gate 3.
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