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LET9120M

RF power transistor

LET9120M Features

* Excellent thermal stability Common source configuration push-pull POUT = 120 W with 18 dB gain @ 860 MHz Internal input matching BeO-free package Description The LET9120M is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed f

LET9120M General Description

The LET9120M is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. M252 Epoxy sealed Figure 1. Pin connection 1 2 3 5 www.DataSheet4U.com 4 1. Drain 2. Drain 3. Source .

LET9120M Datasheet (165.98 KB)

Preview of LET9120M PDF

Datasheet Details

Part number:

LET9120M

Manufacturer:

STMicroelectronics ↗

File Size:

165.98 KB

Description:

Rf power transistor.

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LET9120M power transistor ST Microelectronics

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