LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

STMicroelectronics

Description

LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT.
The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial a.

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Datasheet Specifications

Part number: LET9002
Manufacturer: STMicroelectronics ↗
File Size: 40.75 KB
Datasheet: LET9002_STMicroelectronics.pdf
Description: RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

Applications

* at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source mode at 26 V. LET9002 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It

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LET9002 POWER TRANSISTORS Ldmos Enhanced Technology Plastic Package STMicroelectronics

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