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LET9002

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9002 General Description

The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source mode at 26 V. LE.

LET9002 Datasheet (40.75 KB)

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Datasheet Details

Part number:

LET9002

Manufacturer:

STMicroelectronics ↗

File Size:

40.75 KB

Description:

Rf power transistors ldmos enhanced technology in plastic package.
LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

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LET9002 POWER TRANSISTORS Ldmos Enhanced Technology Plastic Package STMicroelectronics

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