LET9060C RF Power Transistor

STMicroelectronics

Description

LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs .
The LET9060C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial a.

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Datasheet Specifications

Part number: LET9060C
Manufacturer: STMicroelectronics ↗
File Size: 146.92 KB
Datasheet: LET9060C_STMicroelectronics.pdf
Description: RF Power Transistor

Features

* Excellent thermal stability
* Common source configuration
* POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz
* POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MHz
* BeO free package

Applications

* at frequencies up to 1.0 GHz. The LET9060C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. M243 epoxy sealed Figure 1. Pin out 1. Drain 2. Gate 1 3 2 3. Source Table 1. Device summary

LET9060C Distributors

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LET9060C Power Transistor STMicroelectronics

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