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LET9060S

RF power transistor

LET9060S Features

* Excellent thermal stability

* Common source configuration

* POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V

* New RF plastic package Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband,

LET9060S General Description

The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain, linearity and .

LET9060S Datasheet (217.50 KB)

Preview of LET9060S PDF

Datasheet Details

Part number:

LET9060S

Manufacturer:

STMicroelectronics ↗

File Size:

217.50 KB

Description:

Rf power transistor.

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LET9060S power transistor STMicroelectronics

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