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LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

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Description

LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT.
The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

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Applications

* It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It is ideal for digital cellular BTS applications requiring high lin

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