Datasheet4U Logo Datasheet4U.com

LET9006 Datasheet - STMicroelectronics

LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006 boasts the excellent gain, linearity and.

LET9006 Datasheet (40.56 KB)

Preview of LET9006 PDF

Datasheet Details

Part number:

LET9006

Manufacturer:

STMicroelectronics ↗

File Size:

40.56 KB

Description:

Rf power transistors ldmos enhanced technology in plastic package.

📁 Related Datasheet

LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package (STMicroelectronics)

LET9045 RF power transistor (ST Microelectronics)

LET9045C RF power transistor (ST Microelectronics)

LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package (STMicroelectronics)

LET9060 RF power transistor (STMicroelectronics)

LET9060C RF Power Transistor (STMicroelectronics)

LET9060S RF power transistor (STMicroelectronics)

LET9085 RF POWER TRANSISTORS Ldmos Enhanced Technology (STMicroelectronics)

LET9120 RF power transistor (ST Microelectronics)

LET9120M RF power transistor (ST Microelectronics)

TAGS

LET9006 POWER TRANSISTORS Ldmos Enhanced Technology Plastic Package STMicroelectronics

Image Gallery

LET9006 Datasheet Preview Page 2 LET9006 Datasheet Preview Page 3

LET9006 Distributor