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LET9006 Datasheet - STMicroelectronics

LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006 boasts the excellent gain, linearity and.

LET9006_STMicroelectronics.pdf

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Datasheet Details

Part number:

LET9006

Manufacturer:

STMicroelectronics ↗

File Size:

40.56 KB

Description:

Rf power transistors ldmos enhanced technology in plastic package.

LET9006 Distributor

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LET9006 LET9006 POWER TRANSISTORS Ldmos Enhanced Technology Plastic Package STMicroelectronics