LET9006 Datasheet, Package, STMicroelectronics

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LET9006

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STMicroelectronics ↗

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📄 Datasheet

Description:

Rf power transistors ldmos enhanced technology in plastic package. The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, br

LET9006 Application

• Applications It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006 boasts the excellent gain, linearity and reliability of

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LET9006

STMicroelectronics

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