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LET9120 RF power transistor

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Description

LET9120 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data .
The LET9120 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial ap.

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Features

* Excellent thermal stability
* Common source configuration push-pull
* POUT = 120 W with 18 dB gain @ 860 MHz

Applications

* at frequencies up to 1.6 GHz. M246 Epoxy sealed Figure 1. Pin connection 12 1-2 Drain 4-5 Gate 5 4 3 Source Table 1. Device summary Order code LET9120 Package M246 Branding LET9120 October 2010 Doc ID 15509 Rev 5 This is preliminary information on a new product now in development or under

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