LET9045 Datasheet PDF - ST Microelectronics RF power transistor Specs

LET9045 - RF power transistor

Datasheet Summary

Description

The LET9045 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applicatios.

It operates at 28 V in common source mode at frequencies of up to 1 GHz.

Features

Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead).

Datasheet Details

Part number	LET9045
Manufacturer	STMicroelectronics
File Size	251.53 KB
Description	RF power transistor
Datasheet	LET9045 Datasheet
Additional preview pages of the LET9045 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com LET9045 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The LET9045 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applicatios. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.

Published: Jul 16, 2009 |