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LET9150

RF power transistor

LET9150 Features

* Excellent thermal stability

* Common source configuration push-pull

* POUT = 150 W with 20 dB gain @ 860 MHz

* BeO-free package Description The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and indus

LET9150 General Description

The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. M246 Epoxy sealed Figure 1. Pin connection 12 1-2 Drain 4-5 Gate 5 4 3 Source Table 1. Device summary Ord.

LET9150 Datasheet (297.55 KB)

Preview of LET9150 PDF

Datasheet Details

Part number:

LET9150

Manufacturer:

STMicroelectronics ↗

File Size:

297.55 KB

Description:

Rf power transistor.

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TAGS

LET9150 power transistor ST Microelectronics

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