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LET9150 RF power transistor

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Description

LET9150 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs .
The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial ap.

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Features

* Excellent thermal stability
* Common source configuration push-pull
* POUT = 150 W with 20 dB gain @ 860 MHz

Applications

* at frequencies up to 2 GHz. M246 Epoxy sealed Figure 1. Pin connection 12 1-2 Drain 4-5 Gate 5 4 3 Source Table 1. Device summary Order code LET9150 Package M246 December 2010 Doc ID 16369 Rev 6 Branding LET9150 1/12 www. st. com 12 Contents Contents LET9150 1 Electrical data

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LET9150 power transistor ST Microelectronics
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