LET9130 RF POWER TRANSISTORS Ldmos Enhanced Technology

STMicroelectronics

Description

LET9130 RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * IS-95 CDMA: 865-895 MHz .
The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial ap.

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Datasheet Specifications

Part number: LET9130
Manufacturer: STMicroelectronics ↗
File Size: 57.63 KB
Datasheet: LET9130_STMicroelectronics.pdf
Description: RF POWER TRANSISTORS Ldmos Enhanced Technology

Applications

* at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V. Its internal matching makes it ideal for base station applications requiring high linearity. ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj

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LET9130 POWER TRANSISTORS Ldmos Enhanced Technology STMicroelectronics

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