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LET9130

RF POWER TRANSISTORS Ldmos Enhanced Technology

LET9130 General Description

The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V. Its .

LET9130 Datasheet (57.63 KB)

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Datasheet Details

Part number:

LET9130

Manufacturer:

STMicroelectronics ↗

File Size:

57.63 KB

Description:

Rf power transistors ldmos enhanced technology.
LET9130 RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

* IS-95 CDMA: 865-895 MHz .

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LET9130 POWER TRANSISTORS Ldmos Enhanced Technology STMicroelectronics

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