LET9130 Datasheet (STMicroelectronics) - RF POWER TRANSISTORS Ldmos Enhanced Technology

LET9130, RF POWER TRANSISTORS Ldmos Enhanced Technology

The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V.

Its

LET9130 RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs IS-95 CDMA: 865-895 MHz / 28 V POUT = 25 W EFF.

= 29 % EDGE: 920-960 MHz / 28 V POUT = 45 W EFF.

= 38 % GSM: 920-960 MHz / 28 V POUT = 135 W EFF.

= 51 % EXCELLENT THERMAL STABILITY BeO FREE PACKAGE INTERNAL INPUT MATCHING ESD PROTECTION 1 ORDER CODE LET9130 M265 epoxy sealed BRANDING LET9130 PIN CONNECTION DES