LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

STMicroelectronics

Description

LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications * EXCELL.
The LET20030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

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Datasheet Specifications

Part number: LET20030S
Manufacturer: STMicroelectronics ↗
File Size: 43.02 KB
Datasheet: LET20030S_STMicroelectronics.pdf
Description: RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

Applications

* EXCELLENT THERMAL STABILITY
* COMMON SOURCE CONFIGURATION
* POUT = 30 W with 11 dB gain @ 2000 MHz
* ESD PROTECTION

LET20030S Distributors

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LET20030S POWER TRANSISTORS Ldmos Enhanced Technology Plastic Package STMicroelectronics

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