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LET16045C RF power transistor

LET16045C Description

LET16045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Datasheet - production data M243 epoxy sealed Fig.
The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial.

LET16045C Features

* Excellent thermal stability
* Common source configuration
* POUT (@28 V) = 45 W with 16 dB gain @ 1600 MHz
* BeO free package

LET16045C Applications

* at frequencies up to 1.6 GHz. The LET16045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications. 1. Drain 2. Gate 2 3. Source Order code LET16045C Table 1. Device summary Package M243 Branding LET16045C

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STMicroelectronics LET16045C-like datasheet