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LET16045C - RF power transistor

Datasheet Summary

Description

The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz.

The LET16045C is designed for high gain and broadband performance operating in common source mode at 28 V.

Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT (@28 V) = 45 W with 16 dB gain @ 1600 MHz.
  • BeO free package.
  • In compliance with the 2002/95/EC European directive.

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Datasheet Details

Part number LET16045C
Manufacturer STMicroelectronics
File Size 197.56 KB
Description RF power transistor
Datasheet download datasheet LET16045C Datasheet
Additional preview pages of the LET16045C datasheet.

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Full PDF Text Transcription

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LET16045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Datasheet - production data M243 epoxy sealed Figure 1. Pin out 1 3 Features • Excellent thermal stability • Common source configuration • POUT (@28 V) = 45 W with 16 dB gain @ 1600 MHz • BeO free package • In compliance with the 2002/95/EC European directive Description The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications. 1. Drain 2. Gate 2 3. Source Order code LET16045C Table 1.
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