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LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET20015 Description

LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications * EXCELLE.
The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

LET20015 Applications

* EXCELLENT THERMAL STABILITY
* COMMON SOURCE CONFIGURATION
* POUT = 15 W with 11 dB gain @ 2000 MHz
* ESD PROTECTION

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STMicroelectronics LET20015-like datasheet