LET20015
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Rf power transistors ldmos enhanced technology in plastic package. The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, b
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LET20030C - RF POWER TRANSISTORS Ldmos Enhanced Technology
(STMicroelectronics)
LET20030C
RF POWER TRANSISTORS Ldmos Enhanced Technology
TARGET DATA
Designed for GSM / EDGE / IS-97 applications
• IS-97 CDMA PERFORMANCES POUT = 4.
LET20030S - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
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LET20030S
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
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Designed for GSM / EDGE / IS-97 applications • EXCELLENT THER.
LET21004 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
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LET21004
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Designed for GSM / EDGE / IS-97 / WCDMA applications
• EXCELL.
LET21008 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
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LET21008
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 / WCDMA applications
• EXCELL.
LET21030C - RF POWER TRANSISTORS Ldmos Enhanced Technology
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LET21030C
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Designed for GSM / EDGE / IS-97 / WCDMA applications
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LET16045C - RF power transistor
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Datasheet - production data
M243 epoxy sealed
Fig.
LET19060C - RF POWER TRANSISTORS Ldmos Enhanced Technology
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LET19060C
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N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-97 CDMA PERFORMANCES POUT = 7.5 .
LET8180 - RF POWER TRANSISTORS Ldmos Enhanced Technology
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LET8180
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N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
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LET9002 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
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LET9002
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N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
• EXCELLENT THERMAL.
LET9006 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
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LET9006
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N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
• EXCELLENT THERMAL.