LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology

STMicroelectronics

Description

LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * IS-97 CDMA PERFORMANCES POU.
The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial.

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Datasheet Specifications

Part number: LET19060C
Manufacturer: STMicroelectronics ↗
File Size: 34.75 KB
Datasheet: LET19060C_STMicroelectronics.pdf
Description: RF POWER TRANSISTORS Ldmos Enhanced Technology

Applications

* at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity. 2 3 1. Drain 2. Source 3. Gate ABSOLUTE MAXIMUM RATINGS (TCASE = 25

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LET19060C POWER TRANSISTORS Ldmos Enhanced Technology STMicroelectronics

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