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LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology

LET19060C Description

LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * IS-97 CDMA PERFORMANCES POU.
The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial.

LET19060C Applications

* at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity. 2 3 1. Drain 2. Source 3. Gate ABSOLUTE MAXIMUM RATINGS (TCASE = 25

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POWER TRANSISTORS Ldmos Enhanced Technology STMicroelectronics
STMicroelectronics LET19060C-like datasheet