10N30 Datasheet | Specifications & PDF Download

Advance Technical Information High Voltage IGBT IXGH10N300 VCES = 3000V = 10A IC90 VCE(sat) ≤ 3.5V For Capacitor Discharge Applications TO-247 AD

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Production specification N-Channel Power MOSFET BL10N30 FEATURES  High switching speed.  RDS(ON)=0.65Ω @ VGS=10V.  100% avalanche tested.  Very

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LOW NOISE 150mA L.D.O REGULATOR R1110N SERIES APPLICATION MANUAL ELECTRONIC DEVICES DIVISION NO. EA-046-9803 NOTICE 1. The products and the product s

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Production specification N-Channel Power MOSFET BL10N30F FEATURES  High switching speed.  RDS(ON)=0.65Ω @ VGS=10V.  100% avalanche tested.  Ver

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UNISONIC TECHNOLOGIES CO., LTD 10N30 Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET usi

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPP410N30N Data Sheet Rev. 2.0 Final Power Manage

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LOW NOISE 150mA L.D.O REGULATOR R1110N SERIES APPLICATION MANUAL ELECTRONIC DEVICES DIVISION NO. EA-046-9803 NOTICE 1. The products and the product s

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METAL OXIDE VARISTOR 10mm Disc Part Maximum Varistor Maximum Withstanding Rated Energy Typical UL CSA VDE Number Allowable Voltage Voltage (V 0

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R1210Nxx1x SERIES PWM STEP-UP DC/DC CONVERTER NO.EA-075-170303 OUTLINE The R1210Nxx1x Series are CMOS-based PWM step-up DC/DC Converter, with high

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Analog Power N-Channel 300-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and

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isc N-Channel MOSFET Transistor IPP410N30N，IIPP410N30N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤41mΩ ·Enhancement mode ·Fast Switching

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R1210Nxx2x SERIES PWM Step-up DC/DC Controller NO.EA-064-111123 OUTLINE The R1210Nxx2C/xx2D Series are CMOS-based PWM step-up DC/DC Converter contr

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R1210Nxx2x SERIES PWM Step-up DC/DC Controller NO.EA-064-111123 OUTLINE The R1210Nxx2C/xx2D Series are CMOS-based PWM step-up DC/DC Converter contr

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www.vishay.com SQD10N30-330H Vishay Siliconix Automotive N-Channel 300 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (

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R1210Nxx1x SERIES PWM STEP-UP DC/DC CONVERTER NO.EA-075-170303 OUTLINE The R1210Nxx1x Series are CMOS-based PWM step-up DC/DC Converter, with high

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R1210Nxx1x SERIES PWM STEP-UP DC/DC CONVERTER NO.EA-075-170303 OUTLINE The R1210Nxx1x Series are CMOS-based PWM step-up DC/DC Converter, with high

(13 views)