BL10N30F Description
Production specification N-Channel Power MOSFET BL10N30F.
BL10N30F Key Features
- High switching speed
- RDS(ON)=0.65Ω @ VGS=10V
- 100% avalanche tested
- Very Good Manufacturing Reliabilty
- Part: BL10N30F
- Manufacturer: Galaxy Microelectronics
- Size: 205.46 KB
Related Galaxy Microelectronics Datasheets
| Part Number | Description |
|---|---|
| BL10N30 | N-Channel Power Mosfet |
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| BL10N80F | N-Channel Power MOSFET |
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