BL10N30F Overview
Production specification N-Channel Power MOSFET BL10N30F.
BL10N30F Key Features
- High switching speed
- RDS(ON)=0.65Ω @ VGS=10V
- 100% avalanche tested
- Very Good Manufacturing Reliabilty
BL10N30F Datasheet Details
| Part number | BL10N30F |
|---|---|
| Datasheet | BL10N30F-GME.pdf |
| File Size | 205.46 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | N-Channel Power MOSFET |
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