BL10N30F
BL10N30F is N-Channel Power MOSFET manufactured by Galaxy Microelectronics.
Production specification
N-Channel Power MOSFET
Features
- High switching speed.
- RDS(ON)=0.65Ω @ VGS=10V.
- 100% avalanche tested.
- Very Good Manufacturing Reliabilty.
Pb
Lead-free
APPLICATIONS
- N-Channel Power MOSFET.
- Switching Applications.
ITO-220AB
MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
Symbol Parameter
Value
VDS Drain-Source Voltage
Unit V
VGS ID IDM PD EAS EAR PD RθJA RθJC Tj Tstg
Gate -Source Voltage
Drain Current Continuous at TC=25℃ Drain Current(pulsed)Note1
Power Dissipation at TC=25℃ Avalanche Energy(Single Pulsed (Note 2))
Avalanche Energy (Repetitive(Note 3))
Power Dissipation
TC=25℃ Derate above 25°C
Thermal Resistance,Junction-to-Ambient
Thermal Resistance,Junction-to-Case
Junction and Storage Temperature Range
±30
10...
