BL10N30 Overview
Production specification N-Channel Power MOSFET BL10N30.
BL10N30 Key Features
- High switching speed
- RDS(ON)=0.65Ω @ VGS=10V
- 100% avalanche tested
- Very Good Manufacturing Reliabilty
BL10N30 Datasheet Details
| Part number | BL10N30 |
|---|---|
| Datasheet | BL10N30-GME.pdf |
| File Size | 205.83 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | N-Channel Power Mosfet |
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