BL10N30 Description
Production specification N-Channel Power MOSFET BL10N30.
BL10N30 Key Features
- High switching speed
- RDS(ON)=0.65Ω @ VGS=10V
- 100% avalanche tested
- Very Good Manufacturing Reliabilty
- Part: BL10N30
- Manufacturer: Galaxy Microelectronics
- Size: 205.83 KB
Related Galaxy Microelectronics Datasheets
| Part Number | Description |
|---|---|
| BL10N30F | N-Channel Power MOSFET |
| BL10N60F | N-Channel Power MOSFET |
| BL10N65 | N-Channel Power Mosfet |
| BL10N80F | N-Channel Power MOSFET |
| BL1010 | Phototransistor Photocoupler |