10N45 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lo

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GENERAL DESCRIPTION GPT10N45 GPT10N45D POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provid

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Semiconductor RFM10N45, RFM10N50 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate

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RFH10N45, RFH10N50 Semiconductor Data Sheet October 1998 File Number 1629.2 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Features • 10A

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GENERAL DESCRIPTION GPT10N45 GPT10N45D POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provid

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R1210Nxx2x SERIES PWM Step-up DC/DC Controller NO.EA-064-111123 OUTLINE The R1210Nxx2C/xx2D Series are CMOS-based PWM step-up DC/DC Converter contr

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R1210Nxx1x SERIES PWM STEP-UP DC/DC CONVERTER NO.EA-075-170303 OUTLINE The R1210Nxx1x Series are CMOS-based PWM step-up DC/DC Converter, with high

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R1210Nxx2x SERIES PWM Step-up DC/DC Controller NO.EA-064-111123 OUTLINE The R1210Nxx2C/xx2D Series are CMOS-based PWM step-up DC/DC Converter contr

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