10T Datasheet | Specifications & PDF Download

TrenchStop® Series IKP10N60T p Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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LITE-ON SEMICONDUCTOR T4M10T-B SERIES Sensitive Gate Triacs Sillicon Bidirectional Thyristors TRIACS 4 AMPERES RMS 600 VOLTS FEATURES Sensitive Ga

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Super Fast Recovery Diode RFUS10TF4S lSeries Standard Fast Recovery lDimensions (Unit : mm) lApplications General rectification lFeatures 1)Single

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http://www.ncepower.com Pb Free Product NCE02H10T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE02H10T uses advanced trench technol

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Datasheet Values Refer to PCN-OPT-1225-2022-REV-HS1 TSOP131..P10TR, TSOP133..P10TR, TSOP135..P10TR www.vishay.com Vishay Semiconductors IR Receive

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Low ESR Tantalum Chip Capacitors FEATURES • Low ESR and High Ripple Current Ratings • Values from 10μF to 470μF • Suitable for Flow and Reflow Solderin

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Datasheet Values Refer to PCN-OPT-1225-2022-REV-HS1 TSOP132..P10TR, TSOP134..P10TR, TSOP136..P10TR www.vishay.com Vishay Semiconductors IR Receive

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MITSUBISHI THYRISTOR MODULES TM10T3B-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM10T3B-M,-H • IO • VRRM • • • • DC output current

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KYSAN SKU Number 1112089 1112014 1112013 1111107 1111136 1112319 1111142 1111140 1111141 1111142 1112001 16071 1112003 1111146 1112092 1112076 1111126

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LIPTAI ■ Applications Device optimized for low forward voltage drop to maximize efficiency in Power Supply applications • AC-DC Adaptors • DC-DC Conve

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MMBD1010LT1 Switching Diode Part of the GreenLine™ Portfolio of devices with energy−conserving traits. This switching diode has the following features

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ispMACH 4000V/B/C/Z Family January 2004 TM Coolest Power C TM 3.3V/2.5V/1.8V In-System Programmable SuperFAST TM High Density PLDs Data Sheet Feat

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tst

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www.vishay.com 561R and 562R Series Vishay Cera-Mite Lower Voltage Ceramic DC Disc Capacitors 1000 VDC Temperature and Voltage Stabilized FEATURES •

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 125N10T DESCRIPTION ·Drain Current ID=120A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·S

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHX23NQ10T FEATURES • ’Trench’ technology • Low on-state resistance •

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SPECIFICATION OF FBM□-10 SERIES APPLICATIONS 1. EMI suppression for various electric equipment by the addition of impedance to the circuit. 2. It is p

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Multilayer Ceramic Chip Capacitors FEATURES • HIGH Q FOR RF APPLICATIONS • STABLE NPO CHARACTERISTICS OVER TEMPERATURE AND VOLTAGE • HIGH VOLTAGE (UP

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Multilayer Ceramic Chip Capacitors FEATURES • HIGH Q FOR RF APPLICATIONS • STABLE NPO CHARACTERISTICS OVER TEMPERATURE AND VOLTAGE • HIGH VOLTAGE (UP

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Crystal Filter 10.7 MHz-Series MCF n Features Differs from conventional crystal filters, this filter needs no transformer, resulting in a light an

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