10T Datasheet | Specifications & PDF Download

NCEP023N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized

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TrenchStop® Series IKP10N60T p Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T QUICK REFERENCE DATA d FEATURES • ’

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Multilayer Acrylic Polymer Film Capacitors FEATURES • HIGH CAPACITANCE (UP TO 22μF) • WIDE VOLTAGE & TEMPERATURE RANGE (16 ~ 100V, -55°C ~ +125°C or ±

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www.DataSheet.co.kr Multilayer Polymer Film Capacitor Chips FEATURES • HIGH CAPACITANCE (UP TO 22μF) • WIDE VOLTAGE & TEMPERATURE RANGE (16 ~ 63V, -5

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PHP45NQ10T N-channel TrenchMOS standard level FET Rev. 02 — 8 July 2010 Product data sheet 1. Product profile 1.1 General description Standard leve

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Tantalum Chip Capacitors NTC-T Series FEATURES • MOLDED CONSTRUCTION FOR HIGH SOLDERING HEAT RESISTANCE • SEVEN CASE SIZES (P, A, B, C, V, D AND E

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www.DataSheet.co.kr Multilayer Polymer Film Capacitor Chips FEATURES • HIGH CAPACITANCE (UP TO 22μF) • WIDE VOLTAGE & TEMPERATURE RANGE (16 ~ 63V, -5

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Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK420N10T I

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Preliminary QR_0610T30 100 Amp/600 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Fast Recovery Diode Mo

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBT1010LT1/D Low Saturation Voltage PNP Silicon Driver Transistors Part of the Gree

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www.DataSheet4U.com NPN Silicon Phototransistor Type OT 410D and OT 410T The OT410 sensors consist of a high gain NPN silicon photo transistor mounte

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isc N-Channel MOSFET Transistor IXFA130N10T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche vo

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10T QUICK REFERENCE DATA d FEATURES • ’

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Multilayer Ceramic Chip Capacitors FEATURES • X7R, X5R AND Y5V DIELECTRICS • HIGH CAPACITANCE DENSITY • ULTRA LOW ESR & ESL • EXCELLENT MECHANICAL STR

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TrenchPTM Power MOSFET IXTR140P10T P-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = ≤RDS(on) -100V - 110A 11mΩ ISOPLUS247 E153432 Symbol

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INDUCTORS POWER INDUCTORS SMD POWER INDUCTORS(NR SERIES/NR SERIES H TYPE/S TYPE/V TYPE) SMD POWER INDUCTORS（NR SERIES/NR SERIES H TYPE/S TYPE/V TYPE

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Tantalum Chip Capacitors NTC-T Series FEATURES • MOLDED CONSTRUCTION FOR HIGH SOLDERING HEAT RESISTANCE • SEVEN CASE SIZES (P, A, B, C, V, D AND E

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Tantalum Chip Capacitors NTC-T Series FEATURES • MOLDED CONSTRUCTION FOR HIGH SOLDERING HEAT RESISTANCE • SEVEN CASE SIZES (P, A, B, C, V, D AND E

(34 views)

www.DataSheet.co.kr Multilayer Polymer Film Capacitor Chips FEATURES • HIGH CAPACITANCE (UP TO 22μF) • WIDE VOLTAGE & TEMPERATURE RANGE (16 ~ 63V, -5

(34 views)