* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push Pull
IXTR140P10T Datasheet (185.37 KB)
IXTR140P10T
IXYS
185.37 KB
Power mosfet.
TrenchPTM Power MOSFET
IXTR140P10T
P-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 = ≤RDS(on)
-100V - 110A
11mΩ
ISOPLUS247 E153432
Symbol.
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