* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Extended FBSOA z Fast Intrinsic Rectifier z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push
IXTR120P20T Datasheet (191.56 KB)
IXTR120P20T
IXYS
191.56 KB
Power mosfet.
Preliminary Technical Information
TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXTR120P20T
VDSS = ID2.
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