* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation z Dynamic dv/dt Rating z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low Q G z Low Drain-to-Tab Capacita
IXTR170P10P Datasheet (148.08 KB)
IXTR170P10P
IXYS
148.08 KB
Power mosfet.
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR170P10P VDSS = ID25 = ≤RDS(on) -100V -108A 13mΩ ISOPLUS247 E153432 Symbol VD.
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