Datasheet Specifications
- Part number
- IXTR170P10P
- Manufacturer
- IXYS
- File Size
- 148.08 KB
- Datasheet
- IXTR170P10P-IXYS.pdf
- Description
- Power MOSFET
Description
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR170P10P VDSS = ID25 = ≤RDS(on) -100V -108A 13mΩ ISOPLUS247 E153432 Symbol VD.
Features
* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation z Dynamic dv/dt Rating z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low Q G z Low Drain-to-Tab CapacitaApplications
* z High-Side Switches z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators © 2009 IXYS CORPORATION, All Rights Reserved DS99976A(03/09) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = - 85A, Note 1 Ciss Coss Crss VGS = 0V, VDIXTR170P10P Distributors
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