IXTR16P60P Datasheet - IXYS

IXTR16P60P Power MOSFET

Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR16P60P VDSS = ID25 = ≤RDS(on) - 600V - 10A 790mΩ ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 600 - 600 ±20 ±30 V V V V TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C - 10 A - 48 A - 16 A .

IXTR16P60P Features

* z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z The rugged PolarPTM process z Low QG z Low Drain-to-Tab capacitance z Low package inductance - easy to drive and to protect Applications z High si

IXTR16P60P-IXYS.pdf