* z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z The rugged PolarPTM process z Low QG z Low Drain-to-Tab capacitance z Low package inductance - easy to drive and to protect Applications z High si
IXTR16P60P Datasheet (118.45 KB)
IXTR16P60P
IXYS
118.45 KB
Power mosfet.
Preliminary Technical Information
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTR16P60P
VDSS = ID25 = ≤RDS(on)
- 600V - 10A
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