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IXTR102N65X2 - Power MOSFET

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IXYS

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IXTR102N65X2 Power MOSFET by IXYS - Datasheet Preview — Datasheet preview – IXTR102N65X2

Datasheet Details

Part number	IXTR102N65X2
Manufacturer	IXYS
File Size	146.91 KB
Description	Power MOSFET
Datasheet	IXTR102N65X2 Datasheet
Additional preview pages of the IXTR102N65X2 datasheet.

Product details

Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Mounting Surface.
2500V~ Electrical Isolation.
LAovwalaQnGche Rated.
Low Package Inductance Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125C RDS(on) VGS = 10V, ID = 51A, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.0 V 100 nA.

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Published: Aug 18, 2016 |