10Z-3 Datasheet | Specifications & PDF Download

PBSS9110Z 100 V, 1 A PNP low VCEsat transistor 31 July 2025 Product data sheet 1. General description PNP low VCEsat transistor in a SOT223 (SC-73)

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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l

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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l

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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l

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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l

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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l

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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l

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Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features  BVCEO > 60V  IC = 5A High Continuous Current  RSAT = 30mΩ for a

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AB 2 10Z-3 10Z-3 AB 3 Series variations Type Model number Cylinder bore (mm) Working fluid Lubrication Working pressure range Proof test pressure

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isc N-Channel MOSFET Transistor IRFP4410Z，IIRFP4410Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.0mΩ ·Enhancement mode: Vth =2.0 to 4.0

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PI3USB10 3.3V, Wide Bandwidth, 2-Channel, 2:1 Mux/DeMux USB 2.0 Switch w/ Single Enable Features • RON is 4Ω typical • Low bit-to-bit skew: 200ps • Lo

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Freescale Semiconductor, Inc. Data Sheet: Technical Data KV10P48M75 Rev 4, 02/2015 Kinetis V Series KV10, 32/16 KB Flash 75 MHz Cortex-M0+ Based Mic

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PD - 94740 AUTOMOTIVE MOSFET IRFR3710Z IRFU3710Z HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175

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PD - 95951 AUTOMOTIVE MOSFET Features l l l l l l IRFR1010ZPbF IRFU1010ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resist

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PD - 97123A IRFP4310ZPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High

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PD - 96349 Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l R

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FINAL IND: -25 PALLV22V10Z-25 Low-Voltage, Zero-Power 24-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS s Low-voltage operation, 3.3 V

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Isc N-Channel MOSFET Transistor IRFS4310Z ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche

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