10Z-3 Datasheet | Specifications & PDF Download

PALCE22V10 COM'L: H-5/7/10/15/25,Q-10/15/25 IND: H-10/15/20/25 PALCE22V10Z COM'L: -25 IND: -15/25 PALCE22V10 and PALCE22V10Z Families 24-Pin EE CMOS

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IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed

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IRFR3710ZPbF Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche A

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IRFR3710ZPbF Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche A

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AUF1010ZL-VB AUF1010ZL-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Confi

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3710Z，IIRF3710Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤18mΩ ·Enhancement m

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isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche

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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l

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www.DataSheet4U.com

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PD - 94740 AUTOMOTIVE MOSFET IRFR3710Z IRFU3710Z HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175

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UNISONIC TECHNOLOGIES CO., LTD 7N10Z 7A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N10Z is an N-Channel enhancement mode power MOSFET providi

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Isc N-Channel MOSFET Transistor IRF3710ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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PD - 96213 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard

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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4310Z，IIRFP4310Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.0mΩ ·Enhancement

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB4310Z， IIRFB4310Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.0mΩ ·Enhanceme

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AUTOMOTIVE GRADE PD - 97683 AUIRFR1010Z Features ● ● ● ● ● ● ● HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB4410Z，IIRFB4410Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancemen

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