.
HUAYI
HYG053N10NS1B - N-Channel MOSFET
HYG053N10NS1P/B Feature 100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoH.
HUAYI
HYG053N10NS1P - N-Channel MOSFET
HYG053N10NS1P/B Feature 100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoH.
Sharp
PC81710NSZ - Photocoupler
PC8171XNSZ Series PC8171 NSZ SeriesX Low Input Current Type Photocoupler s Features 1. Low input current type(IF=0.5mA) 2. High resistance to noise.
ChipSourceTek
HYG053N10NS1V - N-Channel MOSFET
HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description 100V/95A RDS(ON)=5.2mΩ(typ.)@VG.
Sinopower
SM1110NSA - N-Channel MOSFET
SM1110NSA Features · 100V/1.7A , RDS(ON)=200mW(max.) @ VGS=10V RDS(ON)=235mW(max.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and Gr.
ChipSourceTek
HYG053N10NS1D - N-Channel MOSFET
HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description 100V/95A RDS(ON)=5.2mΩ(typ.)@VG.
Infineon
BSC035N10NS5 - MOSFET
BSC035N10NS5 MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Sup.
ChipSourceTek
HYG053N10NS1C2 - N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET HYG053N10NS1C2 Feature HYG053N10NS1C2 Pin Description 100V/95A RDS(ON)=4.6 mΩ(typ.)@VGS = 10V DDDD DDDD 10.
International Rectifier
IRF1310NSPBF - Power MOSFET
PD- 95322 IRF1310NS/LPbF Lead-Free www.irf.com 1 05/27/04 IRF1310NS/LPbF 2 www.irf.com IRF1310NS/LPbF www.irf.com 3 IRF1310NS/LPbF 4 ww.
INCHANGE
IRF1010NS - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
YZPST
N0910NS200 - HIGH POWER THYRISTOR
Technical Data : N0910NS200 Page 1 of 3 ********************************************************************************************************** H.
Infineon
BSC070N10NS5 - MOSFET
BSC070N10NS5 MOSFET OptiMOSTM5 Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Supe.
YZPST
N0910NS260 - HIGH POWER THYRISTOR
Technical Data : N0910NS260 Page 1 of 3 ********************************************************************************************************** H.
ChipSourceTek
HYG053N10NS1U - N-Channel MOSFET
HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description 100V/95A RDS(ON)=5.2mΩ(typ.)@VG.
HUAYI
HYG042N10NS1P - N-Channel Enhancement Mode MOSFET
HYG042N10NS1P/B Feature 100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Avail.
Sinopower
SM2210NSQG - N-Channel MOSFET
SM2210NSQG Features · 12V/12A, RDS(ON) = 4.3mW(max.) @ VGS =4.5V RDS(ON) = 5.6mW(max.) @ VGS =2.5V · 100% UIS + Rg Tested · Reliable and Rugged · Lead.
Analog Devices
AD8182 - 3.8mA 10ns Switching Multiplexers
a FEATURES Fully Buffered Inputs and Outputs Fast Channel Switching: 10 ns High Speed > 750 MHz Bandwidth (–3 dB) 750 V/s Slew Rate Fast Settling Tim.
STMicroelectronics
110NS3LL - N-channel MOSFET
STL110NS3LLH7 N-channel 30 V, 0.0027 Ω typ., 120 A STripFET™ H7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - production data.
GREENMCU
GRM810NS-06 - 6-channel touch button parallel output / support combination key
GRM810NS_06 ：V01 ：2016/07/19 www.greenmcu.com 1、 .