HYG042N10NS1P Datasheet, Mosfet, HUAYI

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Part number:

HYG042N10NS1P

Manufacturer:

HUAYI

File Size:

863.79kb

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📄 Datasheet

Description:

N-channel enhancement mode mosfet. TO-220FB-3L TO-263-2L Ordering and Marking Information P G042N10 XYMXXXXXX B G042N10 XYMXXXXXX N-Channel MOSFET Package Code P :

Datasheet Preview: HYG042N10NS1P 📥 Download PDF (863.79kb)
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HYG042N10NS1P Application

  • Applications
  • Power Switching application
  • DC-DC Converters N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-

TAGS

HYG042N10NS1P
N-Channel
Enhancement
Mode
MOSFET
HUAYI

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HYG045P03LQ1V - P-Channel Enhancement Mode MOSFET (HUAYI)
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HYG046N04LQ1D - N-Channel MOSFET (HUAYI)
HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.

HYG046N04LQ1U - N-Channel MOSFET (HUAYI)
HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.

HYG046N04LQ1V - N-Channel MOSFET (HUAYI)
HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.

HYG006N04LS1B6 - Single N-Channel Enhancement Mode MOSFET (HUAYI)
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