11n Datasheet | Specifications & PDF Download

FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f

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FTP11N08A N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier Features: • RoHS Compliant • Low ON Resistance • Low Gat

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SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate

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Data Sheet PRELIMINARY December 2010 AR9344 Highly-Integrated and Feature-Rich IEEE 802.11n 2x2 2.4/5 GHz Premium SoC for Advanced WLAN Platforms Gen

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FOR fanM.yEaDnIgA@TzE-liKnCkeOleNc.FcIoDmENUTSIEAOLNLY MT7628 DATASHEET © 2014 - 2015 MediaTek Inc. This document contains information that is propri

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MDF11N65B N-channel MOSFET 650V MDF11N65B N-Channel MOSFET 650V, 12A, 0.65Ω General Description These N-channel MOSFET are produced using advanced M

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SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av

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FTP11N08 N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier • RoHS Compliant • Low ON Resistance • Low Gate Charge • P

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MDF11N60 N-channel MOSFET 600V MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDF11N60 uses advanced Magnachip’s MOSFET Technolo

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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UNISONIC TECHNOLOGIES CO., LTD 11N80 Preliminary 11A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80 is an N-Channel power MOSFET, it uses

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Data Sheet PRELIMINARY December 2010 AR9331 Highly-Integrated and Cost Effective IEEE 802.11n 1x1 2.4 GHz SoC for AP and Router Platforms General Des

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TA2111N/F/FN TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2111N,TA2111F,TA2111FN 3 V AM/FM 1 Chip Tuner IC TA2111N/F/FN are AM/FM 1

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 11N90 ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltag

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www.DataSheet.co.kr SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E

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430V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=0.39 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  F

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AOZ5311NQI-04 High-Current, High-Performance DrMOS Power Module General Description The AOZ5311NQI-04 is a high efficiency synchronous buck power sta

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STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Fea

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STB11NM80 - STF11NM80 STP11NM80 - STW11NM80 N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh™ Power MOSFET Features www.DataSheet4U.

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STD11N65M2, STP11N65M2, STU11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1

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