11n Datasheet | Specifications & PDF Download

LM311 Single Comparator www.fairchildsemi.com Features • Low input bias current : 250nA (Max) • Low input offset current : 50nA (Max) • Differential

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www.DataSheet.co.kr SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E

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LM111-N, LM211-N, LM311-N www.ti.com SNOSBJ1E – MAY 1999 – REVISED MARCH 2013 LM111-N/LM211-N/LM311-N Voltage Comparator Check for Samples: LM111-N

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FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f

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FOR fanM.yEaDnIgA@TzE-liKnCkeOleNc.FcIoDmENUTSIEAOLNLY MT7628 DATASHEET © 2014 - 2015 MediaTek Inc. This document contains information that is propri

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STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Fea

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FTP11N08A N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier Features: • RoHS Compliant • Low ON Resistance • Low Gat

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MDF11N65B N-channel MOSFET 650V MDF11N65B N-Channel MOSFET 650V, 12A, 0.65Ω General Description These N-channel MOSFET are produced using advanced M

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SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate

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RP111x Series Good Transient Response Low Voltage 500mA LDO NO.EA-241-190523 OUTLINE The RP111x Series are CMOS-based LDO regulators featuring 500m

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RTL8198-GR IEEE 802.11n GIGABIT ETHERNET AP/ROUTER NETWORK PROCESSOR PRELIMINARY DATASHEET (CONFIDENTIAL: Development Partners Only) Rev. 0.91 02 Augu

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Data Sheet PRELIMINARY December 2010 AR9344 Highly-Integrated and Feature-Rich IEEE 802.11n 2x2 2.4/5 GHz Premium SoC for Advanced WLAN Platforms Gen

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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MDF11N60 N-channel MOSFET 600V MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDF11N60 uses advanced Magnachip’s MOSFET Technolo

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SKiiP 11NAB126V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper , $3 : , $3 =  1 (' 7859 2 

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UNISONIC TECHNOLOGIES CO., LTD 11N80 Preliminary 11A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80 is an N-Channel power MOSFET, it uses

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UNISONIC TECHNOLOGIES CO., LTD 11NM60 11A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM60 is an Super Junction MOSFET Structure. It

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 11N90 ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltag

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PC3SD11NTZ Series ∗Zero cross type is also available. (PC3SD21NTZ Series) PC3SD11NTZ Series VDRM : 600V Non-zero cross type DIP 6pin Phototriac Coupl

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STD11N65M2, STP11N65M2, STU11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1

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