12-VG-S Datasheet | Specifications & PDF Download

Spec. No.: Version: Total pages: Date: MDGD012-SN01-0 0 28 2004- October-27 AU OPTRONICS CORPORATION Product Functional Specifications 12.1 ” SVGA C

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ESMT SDRAM FEATURES  JEDEC standard 3.3V power supply  LVTTL compatible with multiplexed address  Four banks operation  MRS cycle with address key

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Service Manual ViewSonic VG712s/b-1 Model No. VLCDS23719-6W/7W 17” Color TFT LCD Display (VG712s/b_SM_835_1b Rev. 1b Oct. 2004) ViewSonic“ 381 Brea

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TENTATIVE All information in this technical data sheet is tentative and subject to change without notice. 12.1” SVGA TECHNICAL SPECIFICATION AA121SL09

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TENTATIVE All information in this technical data sheet is tentative and subject to change without notice. 12.1” SVGA TECHNICAL SPECIFICATION AA121SR0

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ESMT SDRAM FEATURES  JEDEC standard 3.3V power supply  LVTTL compatible with multiplexed address  Four banks operation  MRS cycle with address key

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ESMT SDRAM FEATURES  JEDEC standard 3.3V power supply  LVTTL compatible with multiplexed address  Four banks operation  MRS cycle with address key

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Global Mixed-mode Technology G3212 Low Capacitance VGA 2:2 Dual-Graphics Cross- over Switch Features „ Low ON-Resistance 5Ω (Typical), RGB Signal

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TENTATIVE All information in this technical data sheet is tentative and subject to change without notice. 5.7”VGA TECHNICAL SPECIFICATION AA057VF12

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P1203EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -12A SOP- 08 100% UIS tested ABSOLUTE MA

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www.DataSheet4U.com Multilayer Ceramic Capacitors(For General ) Multilayer Ceramic Chip Capacitors (For General Electronic Equipment) Series: ECJ n

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www.DataSheet4U.com Multilayer Ceramic Capacitors(For General ) Multilayer Ceramic Chip Capacitors (For General Electronic Equipment) Series: ECJ n

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TRANSFORMERS SMD transformers for automotive grade Transformers for IGBT/FET RoHS Cl Br REACH Halogen SVHC-Free Free Pb Lead Free VGT series FEATU

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TC58NVG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a sing

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TC58NVG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT (128M  8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3HBAI4 is

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TENTATIVE All information in this technical data sheet is tentative and subject to change without notice. 12.1” SVGA TECHNICAL SPECIFICATION AA121SL1

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TENTATIVE All information in this technical data sheet is tentative and subject to change without notice. 12.1” SVGA TECHNICAL SPECIFICATION AA121SN0

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For Bunion electronic Co., Ltd. 12.1” SVGA TECHNICAL SPECIFICATION AA121SR01 MITSUBISHI ELECTRIC Corp. MITSUBISHI Confidential (1/26) Date: Feb.1

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TENTATIVE All information in this technical data sheet is tentative and subject to change without notice. 12.1” SVGA TECHNICAL SPECIFICATION AA121SL0

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