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100V, 120A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGX105R5T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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MOSFET – N-Channel, POWERTRENCH) 30 V, 1.23 mW FDMC012N03 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH pr

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N0412N N-channel MOSFET 40 V, 100 A, 3.7 mΩ Preliminary Data Sheet R07DS0554EJ0200 Rev.2.00 2020.6.10 Features • Low on-state resistance : RDS (on)

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SPTP12R15H 120V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=10.8mΩ@VGS=10V  Low Gate Charge Minimize Switch

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DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconducto

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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch January 2015 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Sw

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InterFET Product Folder Technical Support Order Now J111-2-3A J111/A, J112/A, J113/A N-Channel JFET Features • InterFET N0132S Geometry • Low No

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InterFET Product Folder Technical Support Order Now J111-2-3A J111/A, J112/A, J113/A N-Channel JFET Features • InterFET N0132S Geometry • Low No

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60V,12A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFE6001T2 uses advanced trench technology and design to provide excellent RDS(on) with low gate

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N-Channel Switch J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 Features • This Device is Designed for Low Level Analog Switching, Sample and Hold Ci

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APL6012 Low-Power, 8-bit, 15-Channel Analog to Digital Converters Features General Description • Supply Input Voltages Range: 2.8V to 5.5V • 100uA

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.:rSiliconix ~ incorporated J111 A SERIES N-Channel JFET The J 111 A Series is a low-cost. all-purpose analog switch designed to support a wide rang

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J/SST111 Series Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) J/SST111 J/SST112 J/SST113 –3 to –10 –1

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JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features  30V, 18A RDS(ON)<13mΩ @ VGS =10V RDS(ON)<22.5mΩ @ VGS =4.5V  Advanc

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30V,12A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFS3001T2 uses advanced trench technology and design to provide excellent RDS(on) with low gate

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N-Channel Enhancement Mode Power MOSFET Description The PE40N12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low D

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19-1531; Rev 3; 12/02 KIT ATION EVALU E L B A AVAIL 400ksps, +5V, 8-/4-Channel, 12-Bit ADCs with +2.5V Reference and Parallel Interface General Desc

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