PE40N12 - N-Channel Enhancement Mode Power MOSFET

Description

The PE40N12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =40V,ID =150A RDS(ON).

semi one

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Datasheet Details

Part number	PE40N12
Manufacturer	semi one
File Size	825.64 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE40N12 Datasheet
Additional preview pages of the PE40N12 datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The PE40N12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. PE40N12 General Features ● VDS =40V,ID =150A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.

Published: Dec 3, 2018 |