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PE4425 - P-Channel Enhancement Mode Power MOSFET

General Description

The PE4425 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-40V,ID =-15A RDS(ON).

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Datasheet Details

Part number PE4425
Manufacturer semi one
File Size 659.52 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE4425 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE4425 P-Channel Enhancement Mode Power MOSFET Description The PE4425 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-40V,ID =-15A RDS(ON) <10mΩ @ VGS=-10V RDS(ON) <15mΩ @ VGS=-4.