120-CHANNEL Datasheet | Specifications & PDF Download

2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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Ordering number : ENN7067 Thick-Film Hybrid IC STK402-120 Two-Channel Class AB Audio Power Amplifier IC 80 W + 80 W Overview The STK402-000 series p

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ALC1200 (PN: ALC1200-VD1-CG) 7.1+2 CHANNEL HD AUDIO CODEC WITH CONTENT PROTECTION DATASHEET Preliminary version Rev. 0.11 26th July 2018 Realtek S

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SPECIFICATION No. STK403-120 1. Case Outline 15Pins (See attached Package Outline Diagram) 2. Function 3. Application 2 channels AF power amplifier 8

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WNSC2M40120B7 N-Channel Silicon Carbide MOSFET Rev.01 - 23 November 2023 Product data sheet 1. General description Silicon Carbide MOSFET in a TO263

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AONS62922 120V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic level Gate Drive • Optimized for

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FR1205-VB FR1205-VB Datasheet N-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V ID

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120P3N-VB 120P3N-VB Datasheet P-Channel 30 V (D-S) MOSFET www.VBsemi.com VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID -30 V 11 mΩ 18 mΩ -45 A

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JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features  30V, 18A RDS(ON)<13mΩ @ VGS =10V RDS(ON)<22.5mΩ @ VGS =4.5V  Advanc

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V X / Mob:15919711751 ASC100N1200MT3 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide s

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ILI5120 1200/1152/1080/960-Output Channels TFT LCD Gate Driver Specification Preliminary Version: V0.01 Document No.: ILI5120_SPEC_V0.01.pdf ILI TECHN

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WNSC2M40120B7-A N-Channel Silicon Carbide MOSFET Rev.02 - 11 October 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO26

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WNSC2M40120R N-Channel Silicon Carbide MOSFET Rev.05 - 04 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO247-

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WNSC2M150120B7-A N-Channel Silicon Carbide MOSFET Rev.01 - 11 October 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO2

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X.PAK NSF030120T2A0 1200 V, 30 mΩ, N-channel SiC MOSFET 24 March 2025 Product data sheet 1. General description The NSF030120T2A0 is a Silicon Carb

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N-Channel Enhancement Mode Power Mosfet Description The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low

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WNSC2M30120B7-A N-Channel Silicon Carbide MOSFET Rev.02 - 11 October 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO26

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WNSC2M20120R-A N-Channel Silicon Carbide MOSFET Rev.01 - 13 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO24

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WNSC2M30120R-A N-Channel Silicon Carbide MOSFET Rev.01 - 13 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO24

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Description V X / Mob:15919711751 ASC30N1200MT3 1200V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide su

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