120-CHANNEL Datasheet | Specifications & PDF Download

RU30120R N-Channel Advanced Power MOSFET MOSFET Features • 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.5V • Super High

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Ordering number : ENN7067 Thick-Film Hybrid IC STK402-120 Two-Channel Class AB Audio Power Amplifier IC 80 W + 80 W Overview The STK402-000 series p

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NIKO-SEM N-Channel Logic Level Enhancement P1203BVA Mode Field Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON

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TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.18 Ω at VGS = – 10 V D 3-V Compatible D Requires No External VCC D TT

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UNISONIC TECHNOLOGIES CO., LTD UTT120N06 Preliminary N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION Power MOSFET The U TC UTT 120N06 is a n N

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Product Overview The NSi812x devices are high reliability dual-channel digital isolator. The NSi812x device is safety certified by UL1577 support seve

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N N-CHANNEL IGBT R TT040K120EQ MAIN CHARACTERISTICS IC 40 A VCES 1200V Vcesat-ty（p Vge=15V） 1.8V Package   UPS APPLICATIONS  General

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Silicon N-Channel Power MOSFET ○R CS120N08 A8 General Description： CS120N08 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced

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HGTD1N120BNS, HGTP1N120BN Data Sheet January 2000 File Number 4649.2 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-

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Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L NVHL080N120SC1 Features • Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (typ. QG(tot) =

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RU60120R N-Channel Advanced Power MOSFET MOSFET Features • 60V/125A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resi

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AOD4120 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4120 uses advanced trench technology and design to provide excel

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www.DataSheet4U.com IRFY120 MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.67 N–CHANNEL POWER MOSFET FOR HI

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[AK5388] AK5388 120dB 24-bit 192kHz 4-Channel ADC GENERAL DESCRIPTION The AK5388 is a 24bit, 216kHz sampling 4-channel A/D converter for high-end aud

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SPECIFICATION No. STK403-120 1. Case Outline 15Pins (See attached Package Outline Diagram) 2. Function 3. Application 2 channels AF power amplifier 8

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SVT120N08T/S_Datasheet 120A, 80V N-CHANNEL MOSFET DESCRIPTION SVT120N08T/S is an N-channel enhancement mode power MOS field effect transistor which

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MOSFET – Power, Single, P-Channel, TSOP-6 -60 V, -2.9 A NTGS5120P, NVGS5120P Features • 60 V BVds, Low RDS(on) in TSOP−6 Package • 4.5 V Gate Rating

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3 Channel Q1 BOOST Module NXH240B120H3Q1PG, NXH240B120H3Q1PG-R, NXH240B120H3Q1SG The NXH240B120H3Q1PG is a case power module containing a three chann

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DATA SHEET www.onsemi.com 3.3 V USB 3.1 Gen-2 10 Gbps Quad Channel / Dual Port Linear Redriver NB7NPQ1204EM UQFN34 CASE 523BR MARKING DIAGRAM NB7N

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STH13N120K5-2AG Datasheet Automotive-grade N-channel 1200 V, 0.62 Ω typ., 12 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package TAB 23 1 H2PAK-2 D(TAB)

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