120-CHANNEL Datasheet | Specifications & PDF Download

Ordering number : ENN7067 Thick-Film Hybrid IC STK402-120 Two-Channel Class AB Audio Power Amplifier IC 80 W + 80 W Overview The STK402-000 series p

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ALC1200 (PN: ALC1200-VD1-CG) 7.1+2 CHANNEL HD AUDIO CODEC WITH CONTENT PROTECTION DATASHEET Preliminary version Rev. 0.11 26th July 2018 Realtek S

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UNISONIC TECHNOLOGIES CO., LTD 4N120 4.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N120 provide excellent RDS(ON), low gate charge and ope

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SPECIFICATION No. STK403-120 1. Case Outline 15Pins (See attached Package Outline Diagram) 2. Function 3. Application 2 channels AF power amplifier 8

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HRLO120N10H Jan 2016 HRLO120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi

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PE58120P N-Channel Enhancement Mode Power MOSFET Description The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charg

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JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features  30V, 18A RDS(ON)<13mΩ @ VGS =10V RDS(ON)<22.5mΩ @ VGS =4.5V  Advanc

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Ordering number : ENN7346 Thick-Film Hybrid IC STK404-120 One-Channel Class AB Audio Power Amplifier IC 80 W Overview The STK404-000 series products

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100V, 120A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGX105R5T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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P1203BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 12mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C

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IRFM120ATF-VB IRFM120ATF-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.100 at VGS = 10 V 100 0.1

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SPTP12R15H 120V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=10.8mΩ@VGS=10V  Low Gate Charge Minimize Switch

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N N-CHANNEL IGBT R TT040K120EQ MAIN CHARACTERISTICS IC 40 A VCES 1200V Vcesat-ty（p Vge=15V） 1.8V Package   UPS APPLICATIONS  General

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w w .D w t a S a e h t e U 4 .c m o www.DataSheet4U.com

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® MOS-TECH Semiconductor Co.,LTD 07  N-Channel Power MOSFET 4V,  A, mΩ Features • RDS(on) = 3mΩ (Typ.)@ VGS = 10V, ID = 80A • Qg(tot) = 345nC

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NIKO-SEM N-Channel Logic Level Enhancement P1203BVA Mode Field Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON

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DISCRETE SEMICONDUCTORS DATA SHEET BST120 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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YMP120N06 N-Channel Enhancement Mode Power MOSFET Features ● VDS=70V；ID=120A@ VGS =10V RDS(ON)< 4 mΩ @ VGS =10V ； ● Low gate charge ● Low Crss (typ

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www.DataSheet4U.com

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